V. Mohammed Zackriya ¹, Anurag Verma ¹, Harish M. Kittur ¹

Affiliations
1 School of Electronics Engineering, VIT University, Vellore - 632014, Tamil Nadu, IN

Abstract

Power dissipation due to memories has become a major concern of modern digital design. Scaling of CMOS technology has lead to short channel effects. Here CAM cells are designed using FinFET which have better gate control over drain to source current. The CAM cells designed with 30nm LG are used in multi-segment hybrid CAM architecture. The results are compared with the original hybrid CAM. It is observed that the energy metric of proposed architecture is 7% less compared to hybrid CAM.

Keywords

Content-Addressable Memory (CAM), FinFET, Hybrid-Type CAM.

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